Wide bandgap (WBG) semiconductors are essential to our technology future. Power electronics made with WBG components overcome the upper limits on temperature, frequency, and voltage that apply to ...
Direct epitaxial growth of gallium antimonide (GaSb) on silicon (Si) holds the potential for creating new applications in mid-infrared (MIR) silicon photonics. However, this is challenging due to the ...
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US company introduces breakthrough technology for GaN-on-silicon based RF systems
California-based company Atomera has announced a materials engineering advancement intended to make gallium nitride ...
An AlN template layer is required for growth of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs). However, the crystal quality of AlN templates grown on both flat and patterned Si ...
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